Presentation + Paper
5 March 2021 AlGaP LEDs optimization
Author Affiliations +
Abstract
Under operating conditions, heterostructures can be exposed to high-energy radiation, for example, in space or at nuclear power or medical objects, which can lead to AlGaP LEDdegradation. Heterostructure resistance investigation is currently relevant and in the future will allow to create express method of predicting LED life time during their design and the possibilities for optimizing LEDs. Investigations of spectral parameters under irradiation cycles influence was carried out. It was detected that for increase life time and to decrease damage is need to use bulk substrates GaP.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alex Savchuk, Oleg Rabinovich, Sergey Didenko, Marina Orlova, and Svetlana Podgornaya "AlGaP LEDs optimization", Proc. SPIE 11680, Physics and Simulation of Optoelectronic Devices XXIX, 1168011 (5 March 2021); https://doi.org/10.1117/12.2577015
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KEYWORDS
Light emitting diodes

Quantum wells

Neodymium

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