New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substrate

Takeshi Kamikawa; Srinivas Gandrothula; Hongjian Li; V. Bonito Olivia; Feng Wu; Daniel Cohen; James S. Speck; Steven P. Denbaars; Shuji Nakamura

doi:10.1117/12.2584814

15 March 2021 New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substrate

Takeshi Kamikawa, Srinivas Gandrothula, Hongjian Li, V. Bonito Olivia, Feng Wu, Daniel Cohen, James S. Speck, Steven P. Denbaars, Shuji Nakamura

Author Affiliations +

Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116860M (2021) https://doi.org/10.1117/12.2584814
Event: SPIE OPTO, 2021, Online Only

Abstract

We propose a new Fabry-Perot (FP) GaN laser fabrication method utilizing an epitaxial lateral overgrowth (ELO) technique and m-plane cleavability of the GaN crystal. The removed m-plane InGaN laser having a lasing wavelength 408. 1 nm operated at a low threshold current density as low as 2.15 kA/cm². First, unlike a conventional ELO growth technique, we avoid coalescence between adjacent ELO layers, thus forming island-like ELO layer bars, which were later used as the base for FP GaN laser. Then, a laser device epilayers were epitaxially grown and laser ridge structure was fabricated on each of these non-coalesced island-like ELO base layers. Island-like ELO laser bar formation facilitates an easy removal of the laser bars mechanically using a commercially available adhesive polymer film. Our investigation found that cleavable m-plane of the GaN crystal assists in the liftoff of the fabricated m-plane InGaN FP lasers. We further confirm that the reported fabrication method can be adopted to semi-polar crystal plane orientations of GaN.

Conference Presentation

Citation Download Citation

Takeshi Kamikawa, Srinivas Gandrothula, Hongjian Li, V. Bonito Olivia, Feng Wu, Daniel Cohen, James S. Speck, Steven P. Denbaars, and Shuji Nakamura "New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substrate", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116860M (15 March 2021); https://doi.org/10.1117/12.2584814

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available