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5 March 2021 Impurity incorporation mechanism in GaN MOVPE: ab initio-based approach
Yoshihiro Kangawa
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Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116861E (2021) https://doi.org/10.1117/12.2577463
Event: SPIE OPTO, 2021, Online Only
Abstract
III-Nitride semiconductors are attractive materials for optoelectronic devices including LEDs and LDs. To enhance the device performances, it is important to prevent impurity incorporation during thin film growth. The knowledge of atomistic-scale phenomena is indispensable to prevent contamination of thin films. In the present work, we model elementary growth processes in GaN MOVPE such as (1) vapor phase reaction, (2) surface reaction and (3) solid-phase diffusion during epitaxy. In this presentation, we discuss incorporation mechanisms of carbon in GaN(0001) and (000-1) MOVPE, and of oxygen in vicinal GaN(10-10) MOVPE.
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Yoshihiro Kangawa "Impurity incorporation mechanism in GaN MOVPE: ab initio-based approach", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116861E (5 March 2021); https://doi.org/10.1117/12.2577463
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KEYWORDS
Gallium nitride
Light emitting diodes
Process modeling
Vapor phase epitaxy
Reliability
Semiconductor lasers
Semiconductors
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