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5 March 2021 Comparison of top-down approaches for the fabrication of highly ordered GaN nanowire arrays
Miriam Oliva, Abbes Tahraoui, Thomas Auzelle, Jonas Lähnemann, Lutz Geelhaar, Oliver Brandt
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Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116861M (2021) https://doi.org/10.1117/12.2578176
Event: SPIE OPTO, 2021, Online Only
Abstract
GaN nanowire (NW) arrays are investigated with the main focus on their uniformity, which is a key requirement for the performance of photonic crystals. The NWs are fabricated by two established top-down approaches which are directly compared and critically discussed in terms of their individual merits and drawbacks. A statistical analysis of NW arrays with a nominal NW spacing of 200 nm and NW diameters of 30–70 nm yields distributions of the spacing (diameter) peaking around their nominal values within standard deviations of 2–6 (3–4) nm, a circularity of 0.88–0.89 and a yield of 99.9%.
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Miriam Oliva, Abbes Tahraoui, Thomas Auzelle, Jonas Lähnemann, Lutz Geelhaar, and Oliver Brandt "Comparison of top-down approaches for the fabrication of highly ordered GaN nanowire arrays", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116861M (5 March 2021); https://doi.org/10.1117/12.2578176
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KEYWORDS
Gallium nitride
Nanowires
Fabrication
Wet etching
Light emitting diodes
Lithium
Photomicroscopy
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