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5 March 2021 Efficient hole-doping in dilute-anion III-nitrides
Justin C. Goodrich, Damir Borovac, Chee-Keong Tan, Nelson Tansu
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Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116861O (2021) https://doi.org/10.1117/12.2578892
Event: SPIE OPTO, 2021, Online Only
Abstract
Efficient p-type doping of III-nitride materials is notoriously difficult due to their large band gaps, intrinsic n-type doping, and the large ionization energy of acceptors. Dilute-anion III-nitride materials are a promising solution for addressing this issue and increasing the activation efficiency of p-type dopants. Upward movement of the valence bands reduces the ionization energy of the dopants, allowing for enhanced p-type conductivity in comparison to the conventional nitrides. Incorporation of a dilute-arsenic impurity into AlN significantly reduces the ionization energy of Mg-acceptors from 500 meV to 286 meV, allowing for a two-order magnitude increase in activation efficiency in 6.25%-As AlNAs.
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Justin C. Goodrich, Damir Borovac, Chee-Keong Tan, and Nelson Tansu "Efficient hole-doping in dilute-anion III-nitrides", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116861O (5 March 2021); https://doi.org/10.1117/12.2578892
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KEYWORDS
Doping
Aluminum nitride
Ionization
Optoelectronics
Energy efficiency
Optoelectronic devices
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