Operando analysis of local strain induced by inverse piezoelectric effect in AlGaN/GaN HEMT using synchrotron radiation nanobeam x-ray diffraction

Akira Sakai

doi:10.1117/12.2577552

6 March 2021 Operando analysis of local strain induced by inverse piezoelectric effect in AlGaN/GaN HEMT using synchrotron radiation nanobeam x-ray diffraction

Akira Sakai

Author Affiliations +

Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 1168629 (2021) https://doi.org/10.1117/12.2577552
Event: SPIE OPTO, 2021, Online Only

Abstract

We have performed the operando analysis using synchrotron radiation nanobeam X-ray diffraction (nanoXRD) techniques combined with the pump-probe method to quantitatively analyze strain induced by the inverse piezoelectric effect (IPE) in AlGaN/GaN HEMTs in operation. The c-plane lattice spacing change of the AlGaN barrier depending on applied gate voltage to the device and its transient states were successfully detected with a nanosecond resolution. Since our nanoXRD analysis directly characterizes IPE-induced crystalline lattice structures, it paves the way for novel approaches to elucidate defect formation mechanisms in nitride semiconductor based HEMT devices.

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Akira Sakai "Operando analysis of local strain induced by inverse piezoelectric effect in AlGaN/GaN HEMT using synchrotron radiation nanobeam x-ray diffraction", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 1168629 (6 March 2021); https://doi.org/10.1117/12.2577552

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KEYWORDS

Field effect transistors

Piezoelectric effects

Synchrotron radiation

X-ray diffraction

Crystals

Reliability

Semiconductors

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