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5 March 2021 Oxide thin films for high mobility n-channel and p-channel transistors
Darrell Schlom
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Proceedings Volume 11687, Oxide-based Materials and Devices XII; 116871J (2021) https://doi.org/10.1117/12.2590652
Event: SPIE OPTO, 2021, Online Only
Abstract
This talk is on the growth of semiconducting oxides for transistors. The films are grown by oxide MBE and the materials focus is La-doped BaSnO3 for the channel of n-type transistors and Sn2+-based oxides for the channel of p-type transistors. In addition to producing the highest mobility BaSnO3 films, we have achieved a fully transparent thin-film transistor utilizing them that provides a drain current exceeding 0.45 mA/μm and an on-off ratio of 1.5 × 10^8. A growth variant of MBE--“suboxide MBE”--will also be described that makes it possible to deposit Sn2+-based compounds at BEOL-compatible growth temperatures.
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Darrell Schlom "Oxide thin films for high mobility n-channel and p-channel transistors", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116871J (5 March 2021); https://doi.org/10.1117/12.2590652
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KEYWORDS
Transistors
Oxides
Thin films
N-type semiconductors
P-type semiconductors
Semiconductors
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