Fabrication and performance of diamond field effect transistors, transfer-doped with vanadium pentoxide

James Weil; Pankaj B. Shah; Dmitry Ruzmetov; Mahesh R. Neupane; Leo M. De La Cruz; Khamsouk Kingkeo; Anthony G. Birdwell; Tony G. Ivanov

doi:10.1117/12.2587818

12 April 2021 Fabrication and performance of diamond field effect transistors, transfer-doped with vanadium pentoxide

James Weil, Pankaj B. Shah, Dmitry Ruzmetov, Mahesh R. Neupane, Leo M. De La Cruz, Khamsouk Kingkeo, Anthony G. Birdwell, Tony G. Ivanov

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Proceedings Volume 11742, Radar Sensor Technology XXV; 117420S (2021) https://doi.org/10.1117/12.2587818
Event: SPIE Defense + Commercial Sensing, 2021, Online Only

Abstract

Army Research Laboratory (ARL) is developing radio frequency (RF) field-effect-transistors (FETs) on hydrogen-terminated, single-crystal diamond surfaces. By employing advanced fabrication methods, we achieve state-of-the-art device performance with gate lengths below 100 nm. We are exploring methods to improve the stability of fabricated FETs, which is critical for maturation of the technology and its commercial acceptance. DC and RF measurement data will be reviewed and discussed within the framework of improving device yield and reliability.

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James Weil, Pankaj B. Shah, Dmitry Ruzmetov, Mahesh R. Neupane, Leo M. De La Cruz, Khamsouk Kingkeo, Anthony G. Birdwell, and Tony G. Ivanov "Fabrication and performance of diamond field effect transistors, transfer-doped with vanadium pentoxide", Proc. SPIE 11742, Radar Sensor Technology XXV, 117420S (12 April 2021); https://doi.org/10.1117/12.2587818

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