Quasi-strain-free GaN on van der Waals substrates: the case of graphene and muscovite mica

Ana Cros; Saül Garcia-Orrit; Núria Garro; Oleksii Klymov; María José Recio-Carretero; Marion Gruart; Rémy Vermeersch; Fabrice Donatini; Catherine Bougerol; Bruno Gayral; Stéphanie Pouget; Edith Bellet-Amalric; Nicolas Mollard; Hanako Okuno; Jean-Luc Rouviere; Nathaniel Feldberg; Bruno Daudin

doi:10.1117/12.2596370

1 August 2021 Quasi-strain-free GaN on van der Waals substrates: the case of graphene and muscovite mica

Ana Cros, Saül Garcia-Orrit, Núria Garro, Oleksii Klymov, María José Recio-Carretero, Marion Gruart, Rémy Vermeersch, Fabrice Donatini, Catherine Bougerol, Bruno Gayral, Stéphanie Pouget, Edith Bellet-Amalric, Nicolas Mollard, Hanako Okuno, Jean-Luc Rouviere, Nathaniel Feldberg, Bruno Daudin

Author Affiliations +

Proceedings Volume 11800, Low-Dimensional Materials and Devices 2021; 118000C (2021) https://doi.org/10.1117/12.2596370
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States

Abstract

The use of van der Waals substrates, in which the epitaxial growth is achieved through weak dipolar interactions, can result in a significant relaxation of the epilayer strain, facilitating at the same time layer detachment. Here, we study the case of GaN layers grown on graphene and muscovite mica. Morphology, surface potential and strain relaxation of GaN are addressed. In the case of graphene, we show it experiences interesting transformations during the growth of GaN, resulting in the intercalation of metal atoms below the graphene layer. In the case of mica, we find that part of the strain accumulated in the GaN layer relaxes by the formation of three-dimensional structures in the shape of telephone cord buckles, straight blisters or by more complex arrangements. Their characteristics are studied in relation to the initial compressive strain and the elastic parameters of the materials.

Conference Presentation

Citation Download Citation

Ana Cros, Saül Garcia-Orrit, Núria Garro, Oleksii Klymov, María José Recio-Carretero, Marion Gruart, Rémy Vermeersch, Fabrice Donatini, Catherine Bougerol, Bruno Gayral, Stéphanie Pouget, Edith Bellet-Amalric, Nicolas Mollard, Hanako Okuno, Jean-Luc Rouviere, Nathaniel Feldberg, and Bruno Daudin "Quasi-strain-free GaN on van der Waals substrates: the case of graphene and muscovite mica", Proc. SPIE 11800, Low-Dimensional Materials and Devices 2021, 118000C (1 August 2021); https://doi.org/10.1117/12.2596370

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available