Solution-processable organic photodiodes with high detectivity and thermal stability designed for visible or near-infrared CMOS image sensors

Hidneori Nakayama; Kazuhiro Nakabayashi; Rieko Hata; Kazuhiro Mouri; Shigeru Nakane; Izuru Takei

doi:10.1117/12.2593410

4 August 2021 Solution-processable organic photodiodes with high detectivity and thermal stability designed for visible or near-infrared CMOS image sensors

Hidneori Nakayama, Kazuhiro Nakabayashi, Rieko Hata, Kazuhiro Mouri, Shigeru Nakane, Izuru Takei

Author Affiliations +

Proceedings Volume 11809, Organic, Hybrid, and Perovskite Photovoltaics XXII; 118090U (2021) https://doi.org/10.1117/12.2593410
Event: SPIE Organic Photonics + Electronics, 2021, San Diego, California, United States

Abstract

We report materials and device designs of solution-processable organic photodiodes (OPDs) for visible or near-infrared (NIR) light detection compatible with CMOS image sensors (CIS), a large market for photodiodes. OPDs for CIS need to be reliably processable on silicon wafers with conventional methods such as spin coating, to have extremely low dark current even at a couple of negative voltages to utilize high gain read-out circuits, and to be stable under 150–250°C heating to endure module packaging. Those requirements have not been taken into an account for organic photovoltaics (OPVs) development, which assumed large area printing at low processing temperature (<150°C). We selected a conventional structure (p-i-n) with a polymeric hole transport layer (HTL) which we originally made for organic light-emitting diodes (OLEDs). The HTL is free from acids and dopants, contributing to excellent device stability. For visible OPDs, we applied a donor/acceptor blend originally made for OPVs, and obtained an external quantum yield (EQE) of ~85% at 450–700 nm with a dark current of ~10⁻⁷ mA/cm². For NIR OPDs targeting 940 nm, we newly developed NIR absorbing non-fullerene acceptors (NFAs) having a sharp absorption peak at the wavelength to realize high EQE (~80%) and low thermal carriers at dark (~10⁻⁵ mA/cm²). Both type of OPDs retained 70–100% of their original EQEs after thermal annealing at <150°C for two hours. In the presentation video, we will show NIR images obtained from the imaging arrays.

Conference Presentation

Citation Download Citation

Hidneori Nakayama, Kazuhiro Nakabayashi, Rieko Hata, Kazuhiro Mouri, Shigeru Nakane, and Izuru Takei "Solution-processable organic photodiodes with high detectivity and thermal stability designed for visible or near-infrared CMOS image sensors", Proc. SPIE 11809, Organic, Hybrid, and Perovskite Photovoltaics XXII, 118090U (4 August 2021); https://doi.org/10.1117/12.2593410

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