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We have investigated the effect of doping a graphene matrix with silicon atoms on the structure, vibrational and electronic spectra. The impact of substitution on the shape and intensity of the D line in the RAMAN spectrum is shown. It is demonstrated that the shape of the doped sheet depends on the location of Si atoms, which can lead to a significant increase in its dipole moment.
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Galina N. Ten, Vladislav V. Shunaev, Natalia E. Shcherbakova, "Structure, vibrational and electronic spectra of silicon doped graphene," Proc. SPIE 11846, Saratov Fall Meeting 2020: Laser Physics, Photonic Technologies, and Molecular Modeling, 1184616 (4 May 2021); https://doi.org/10.1117/12.2590005