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The EUV Photomask in its state of the art architecture reveals a contradiction in design. Two seemingly disparate functions are juxtaposed to form the foundation of the EUV mask. On the one hand a highly reflective multilayer is required to transmit maximum light to the wafer. On the other hand an inscribed absorber layer pattern spatially selectively blocks the transmission of light to transcribe the pattern of the IC on the wafer. Limitations in the performance of materials result in an inelegant solution with side effects. In this presentation we explore the feasibility of an alternative homogenous mask design with a highly engineered multilayer that can perform the same function as today’s EUV photomasks.
Supriya L. Jaiswal
"New idealized designs for the EUV photomask", Proc. SPIE 11854, International Conference on Extreme Ultraviolet Lithography 2021, 118540V (29 September 2021); https://doi.org/10.1117/12.2600901
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Supriya L. Jaiswal, "New idealized designs for the EUV photomask," Proc. SPIE 11854, International Conference on Extreme Ultraviolet Lithography 2021, 118540V (29 September 2021); https://doi.org/10.1117/12.2600901