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It is possible to plan mass production by multiple patterning technology of 193 immersion scanner at 7nm technology node. Source mask optimization (SMO) is essential for critical layers, which is a long-running job. It is practicable to explore the methodology to shorten the iterative process of SMO. The different initial sources for SMO of freeform source have little impact on runtime, final source shape and process window (PW) because the algorithm tries to avoid getting stuck in a local optimal solution. However, the number of patterns involved in SMO has obvious positive correlation with runtime. Our paper put forward a novel acceleration workflow for reducing the number of candidates in SMO to reduce the total runtime, and get qualified overlapped PW and improve optimization efficiency. The proposed methodology is demonstrated on leading logic technology node. The results show the feasibility to apply the method for runtime decrease and performance improvement.
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