Presentation + Paper
12 October 2021 Acceleration method for source mask optimization at 7nm technology node
Author Affiliations +
Abstract
It is possible to plan mass production by multiple patterning technology of 193 immersion scanner at 7nm technology node. Source mask optimization (SMO) is essential for critical layers, which is a long-running job. It is practicable to explore the methodology to shorten the iterative process of SMO. The different initial sources for SMO of freeform source have little impact on runtime, final source shape and process window (PW) because the algorithm tries to avoid getting stuck in a local optimal solution. However, the number of patterns involved in SMO has obvious positive correlation with runtime. Our paper put forward a novel acceleration workflow for reducing the number of candidates in SMO to reduce the total runtime, and get qualified overlapped PW and improve optimization efficiency. The proposed methodology is demonstrated on leading logic technology node. The results show the feasibility to apply the method for runtime decrease and performance improvement.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaojing Su, Lisong Dong, Yunyun Hao, Yajuan Su, and Yayi Wei "Acceleration method for source mask optimization at 7nm technology node", Proc. SPIE 11855, Photomask Technology 2021, 118550Y (12 October 2021); https://doi.org/10.1117/12.2600884
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KEYWORDS
Source mask optimization

Lithography

SRAF

Etching

Photomasks

Optical lithography

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