Highly efficient light emitting transistor with transparent electrode using simulation

Nasrud Din; Alagesan Subramanian; Muhammad Farhan Khan; Sajid Hussain; Ahmad Raza; Fawad Saeed; Abida Parveen; Qasim Khan; Wei Lei

doi:10.1117/12.2599882

1 July 2021 Highly efficient light emitting transistor with transparent electrode using simulation

Nasrud Din, Alagesan Subramanian, Muhammad Farhan Khan, Sajid Hussain, Ahmad Raza, Fawad Saeed, Abida Parveen, Qasim Khan, Wei Lei

Author Affiliations +

Proceedings Volume 11877, Second iiScience International Conference 2021: Recent Advances in Photonics and Physical Sciences; 1187704 (2021) https://doi.org/10.1117/12.2599882
Event: 2nd iiScience International Conference 2021: Recent Advances in Photonics and Physical Sciences, 2021, Faisalabad, Pakistan

Abstract

Vertical field effect light emitting transistors (VFELETs) have an advantage over lateral ones because they have the ability to conveniently decrease the channel volume. In the VFELET both current density and cut-off frequency are enhanced by this. Current work presents a highly efficient VFELET simulation process based on CdSe quantum dots in which the ITO gate is accompanied by dielectric A_l2O₃. While using AgNW as drain material and Au as source. By changing gate voltage as well as V_ds, the output of the VFELET is greatly improved. The 10^-5A I_d has been achieved by using V_gs 0.4, 0.8, 1.2 and 1.6V. In addition, a higher EQE (2.6 %) and maximum luminance (1.1 × 10⁴ cd m^-2) have also been achieved in current work.

Citation Download Citation

Nasrud Din, Alagesan Subramanian, Muhammad Farhan Khan, Sajid Hussain, Ahmad Raza, Fawad Saeed, Abida Parveen, Qasim Khan, and Wei Lei "Highly efficient light emitting transistor with transparent electrode using simulation", Proc. SPIE 11877, Second iiScience International Conference 2021: Recent Advances in Photonics and Physical Sciences, 1187704 (1 July 2021); https://doi.org/10.1117/12.2599882

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