Presentation + Paper
4 March 2022 Volume manufacturing of high-power diode lasers using 6” wafers
Author Affiliations +
Proceedings Volume 11983, High-Power Diode Laser Technology XX; 1198306 (2022) https://doi.org/10.1117/12.2610727
Event: SPIE LASE, 2022, San Francisco, California, United States
Abstract
High power diode lasers are widely used as the pump sources for fiber lasers and solid-state lasers, or the light sources for direct diode laser systems. To meet the emerging needs of fiber lasers, solid state lasers and direct diode laser systems, diode lasers are moving towards higher volume manufacturing, along with higher performance and lower cost. In this paper, we will present our progresses in these areas. We have set up a 6" GaAs wafer production line for high power diode laser chips, which includes MOCVD epitaxy and wafer fabrication. With the 6" wafer production line, we are producing multi-million chips per month for fiber laser pumping. The 6" wafers show great uniformity and reproducibility. Device performance is outstanding, with near 70% efficiency and high CW roll-over power.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Wang, Shaoyang Tan, Heng Liu, Bo Li, Yiwen Hu, Run Zhao, Xiao Xiao, Yang Cheng, Yintao Guo, Wu Zhao, Lichen Zhang, Pei Miao, Lu'an Guo, Guoliang Deng, Huomu Yang, Hao Zhou, Hong Zhang, and Xinsheng Liao "Volume manufacturing of high-power diode lasers using 6” wafers", Proc. SPIE 11983, High-Power Diode Laser Technology XX, 1198306 (4 March 2022); https://doi.org/10.1117/12.2610727
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KEYWORDS
Semiconducting wafers

Electro optics

Epitaxy

Manufacturing

Semiconductor lasers

Etching

Fiber lasers

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