Growth and defect characterization of doped and undoped β-Ga2O3 crystals

John S. McCloy; Jani Jesenovec; Benjamin L. Dutton; Christopher Pansegrau; Cassandra Remple; Marc H. Weber; Santosh Swain; Matthew McCluskey; Michael Scarpulla

doi:10.1117/12.2611852

5 March 2022 Growth and defect characterization of doped and undoped β-Ga₂O₃ crystals

John S. McCloy, Jani Jesenovec, Benjamin L. Dutton, Christopher Pansegrau, Cassandra Remple, Marc H. Weber, Santosh Swain, Matthew McCluskey, Michael Scarpulla

Author Affiliations +

Proceedings Volume 12002, Oxide-based Materials and Devices XIII; 1200205 (2022) https://doi.org/10.1117/12.2611852
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

Much excitement has surrounded the accelerating development of β-Ga₂O₃ for electronics due to its ultrawide band gap, high breakdown voltage, compatibility with many dopants, and comparative ease of producing large substrates via meltgrowth techniques. Our research has focused on growth and characterization of Czochralski (CZ) and vertical gradient freeze (VGF) single crystals of β-Ga₂O₃ with various dopants, including donors (Zr, Hf, Cr), acceptors (Mg, Zn, Fe, Ni, Cu), and alloying elements (Al). We find in general that doping in CZ and VGF materials can be different and sometimes non-uniform due to the interaction with crucible material (Ir), selective evaporation, and thermal profile. We have also explored the creation and identification of gallium vacancies (V_Ga) through annealing, by using positron annihilation spectroscopy (PAS), hydrogenated Fourier Transform Infrared (FTIR) spectroscopy, and electrical measurements. Different analysis techniques probe different spatial and depth averages, and thus careful consideration must be given to correctly interpret results and significance of defect concentrations determined. Insights from our work to date are offered, in terms of their applicability to devices.

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John S. McCloy, Jani Jesenovec, Benjamin L. Dutton, Christopher Pansegrau, Cassandra Remple, Marc H. Weber, Santosh Swain, Matthew McCluskey, and Michael Scarpulla "Growth and defect characterization of doped and undoped β-Ga₂O₃ crystals", Proc. SPIE 12002, Oxide-based Materials and Devices XIII, 1200205 (5 March 2022); https://doi.org/10.1117/12.2611852

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