Optical degradation of InAs quantum-dot lasers on silicon: dependence on temperature and on diffusion processes

Matteo Buffolo; Michele Zenari; Carlo De Santi; Justin Norman; John E. Bowers; R. W. Herrick; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini

doi:10.1117/12.2607340

3 March 2022 Optical degradation of InAs quantum-dot lasers on silicon: dependence on temperature and on diffusion processes

Matteo Buffolo, Michele Zenari, Carlo De Santi, Justin Norman, John E. Bowers, R. W. Herrick, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Author Affiliations +

Proceedings Volume 12021, Novel In-Plane Semiconductor Lasers XXI; 1202108 (2022) https://doi.org/10.1117/12.2607340
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

This paper investigates the temperature dependence of the optical degradation of InAs quantum-dot (QD) lasers grown on silicon, and its relation with impurity diffusion processes. This goal was achieved by submitting a group of identical 1.3 μm QD LDs on Si to a series of constant-current stress experiments at baseplate temperatures ranging from 15 °C to 75 °C. The analysis of the threshold current (I_th) kinetics revealed that the optical degradation process i) is not activated by temperature for junction temperatures (T_j) lower than 60 °C, ii) becomes temperature activated with E_a ≈ 0.6 eV up to 80 °C, iii) is further accelerated for higher operating temperatures, and iv) resembles a diffusion process, due to the squareroot dependence of the I_th variation on stress time. This peculiar temperature activation was explained in terms of a recombination-enhanced diffusion process, driven be the escape of carriers from the InAs QDs toward nearby semiconductor layers. This process, which is strongly inhibited at low/room temperature, becomes relevant only above a specific temperature threshold. In this condition escaped carriers can be captured by extended defects, where they recombine and release their excess energy non-radiatively. This energy release contributes to the generation of additional defects, and/or to the diffusion of impurities, whose physical origin could be preliminarily attributed to the p-dopant Be, or to the native defects limiting its diffusivity (V_Ga or Ga_I).

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Matteo Buffolo, Michele Zenari, Carlo De Santi, Justin Norman, John E. Bowers, R. W. Herrick, Gaudenzio Meneghesso, Enrico Zanoni, and Matteo Meneghini "Optical degradation of InAs quantum-dot lasers on silicon: dependence on temperature and on diffusion processes", Proc. SPIE 12021, Novel In-Plane Semiconductor Lasers XXI, 1202108 (3 March 2022); https://doi.org/10.1117/12.2607340

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