PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
A nondestructive insight into properties of nanoscale Si-layered system buried within a crystalline wafer is possible due adequate numerical analysis of dielectric functions and optical parameters. The investigation and development were made on an example of the heavily doped and/or highly excited Si:P. The comparison of predicted and measured performances was made on high efficiency bi-facial silicon solar cells.
Marek Basta,Zbigniew T. Kuznicki, andMikaël Hosatte
"SIM-SEG code giving a complete insight into electronic and photovoltaic performances basing on non-destructive optical measurements", Proc. SPIE 12150, Photonics for Solar Energy Systems IX, 121500B (24 May 2022); https://doi.org/10.1117/12.2622101
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Marek Basta, Zbigniew T. Kuznicki, Mikaël Hosatte, "SIM-SEG code giving a complete insight into electronic and photovoltaic performances basing on non-destructive optical measurements," Proc. SPIE 12150, Photonics for Solar Energy Systems IX, 121500B (24 May 2022); https://doi.org/10.1117/12.2622101