Properties of femtosecond laser modified atomic layer deposition SiO2 films and their resistance to nanosecond ultraviolet lasers

Kaixin Yuan; Feng Geng; Qinghua Zhang; Yaguo Li

doi:10.1117/12.2646242

16 December 2022 Properties of femtosecond laser modified e-beam deposited SiO₂ films and their resistance to nanosecond ultraviolet lasers

Kaixin Yuan, Feng Geng, Qinghua Zhang, Yaguo Li

Author Affiliations +

Proceedings Volume 12312, Advanced Laser Processing and Manufacturing VI; 1231208 (2022) https://doi.org/10.1117/12.2646242
Event: SPIE/COS Photonics Asia, 2022, Online Only

Abstract

The point defects exist in the SiO₂ thin films can cause high absorption, which is known to be responsible for laser induced damage of the films under high power nanosecond (ns) laser irradiation. Laser conditioning of the film is beneficial to eliminate the film defects and improve the ability of films to resist ultraviolet (UV) ns laser damage. In this article, femtosecond laser is proposed to modify the SiO₂ films in the hope of improving the damage resistance of films to UV lasers. After femtosecond laser conditioning, the film properties of ALD SiO₂ films were characterized in terms of surface morphology, UV laser damage induced threshold (LIDT) and optical properties. The results show that significant improvement in laser damage resistance is achieved after femtosecond laser conditioning, the LIDT of the 300 nm SiO₂ thin film increased from 1.55 J/cm² to 16.69 J/cm², and the LIDT of the 600 nm SiO₂ thin film increased from 2.01 J/cm² to 9.46 J/cm².

Conference Presentation

Citation Download Citation

Kaixin Yuan, Feng Geng, Qinghua Zhang, and Yaguo Li "Properties of femtosecond laser modified e-beam deposited SiO₂ films and their resistance to nanosecond ultraviolet lasers", Proc. SPIE 12312, Advanced Laser Processing and Manufacturing VI, 1231208 (16 December 2022); https://doi.org/10.1117/12.2646242

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