Graphene assisted III-V layer epitaxy for transferable solar cells

Carlos Macías; Dyhia Tamsaout; Antonella Cavanna; Ali Madouri; Solene Bechu; Laurent Travers; Jean-Christophe Harmand; Stephane Collin; Andrea Cattoni; Amaury Delamarre

doi:10.1117/12.2651667

10 March 2023 Graphene assisted III-V layer epitaxy for transferable solar cells

Carlos Macías, Dyhia Tamsaout, Antonella Cavanna, Ali Madouri, Solene Bechu, Laurent Travers, Jean-Christophe Harmand, Stephane Collin, Andrea Cattoni, Amaury Delamarre

Author Affiliations +

Proceedings Volume 12416, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII; 1241606 (2023) https://doi.org/10.1117/12.2651667
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Transferable III-V thin films, combined with light trapping structures, present several interests for photovoltaics: cost, material usage and weight reduction, flexible devices… To obtain such films, remote epitaxy consists in growing above a graphene covered III-V substrate, providing detachable mono-crystals. We report the fabrication of large-area graphene/GaAs substrates by a metal-assisted dry transfer with a high yield (<95%), reduced damage to the lattice, negligible doping, and stress relaxation. After the optimization of chemical etching steps, XPS reveals a residue-free surface with low oxidation levels compared to conventional transfers. Nucleation studies using MBE resulted in the formation of microcrystals, with partial alignment with the underlying GaAs(001).

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Citation Download Citation

Carlos Macías, Dyhia Tamsaout, Antonella Cavanna, Ali Madouri, Solene Bechu, Laurent Travers, Jean-Christophe Harmand, Stephane Collin, Andrea Cattoni, and Amaury Delamarre "Graphene assisted III-V layer epitaxy for transferable solar cells", Proc. SPIE 12416, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII, 1241606 (10 March 2023); https://doi.org/10.1117/12.2651667

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