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15 March 2023 Impact of AlN buffer layers on MBE grown cubic GaN layers
Jörg Schörmann, Mario F. Zscherp, Nils Mengel, Detlev M. Hofmann, Vitalii Lider, Badrosadat Ojaghi Dogahe, Celina Becker, Andreas Beyer, Kerstin Volz, Sangam Chatterjee
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Proceedings Volume 12421, Gallium Nitride Materials and Devices XVIII; 1242103 (2023) https://doi.org/10.1117/12.2648960
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Cubic nitrides are candidate materials for next-generation optoelectronic applications as they lack internal fields and promise to cover large parts of the electromagnetic spectrum from the deep UV towards the mid infrared. This demands high-quality epitaxial growth of c-GaN as base material. We demonstrate the influence of pre-growth treatments and c- AlN buffer layers on the quality of c-GaN grown on 3C-SiC/Si substrates by molecular beam epitaxy (MBE). Optimized parameters yield extremely small surface roughness values below 1 nm of phase pure c-GaN layers with very limited stacking fault densities. Structural properties have been studied by X-ray diffraction and atomic force microscopy and surpasses the current standards, which allows for growth of more complex quantum structures for device application.
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Jörg Schörmann, Mario F. Zscherp, Nils Mengel, Detlev M. Hofmann, Vitalii Lider, Badrosadat Ojaghi Dogahe, Celina Becker, Andreas Beyer, Kerstin Volz, and Sangam Chatterjee "Impact of AlN buffer layers on MBE grown cubic GaN layers", Proc. SPIE 12421, Gallium Nitride Materials and Devices XVIII, 1242103 (15 March 2023); https://doi.org/10.1117/12.2648960
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KEYWORDS
Gallium nitride
Aluminum
Silicon carbide
Reflection
Atomic force microscopy
Surface roughness
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