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Achieving higher operating temperatures is a key-point in the current infrared photodetection research. One promising way to achieve this goal is through the reduction of the thickness of the active region and the use of optical resonators to compensate the consequent loss of absorption. Herein we present simulation results of the absorption in a thin LWIR T2SL photodetector, capped with heavily doped semiconductors nanostructures and the benches used to measure their properties.
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