Presentation
30 April 2023 A CD uniformity study comparing MRC-constrained all-angle to Manhattan OPC corrections on EUV
Ryan Pearman, Ragu Venkatesan, Arvind Sundaramurthy, Patrick Straney, Zach Rice, Rusty Conner, Harsha Grunes
Author Affiliations +
Abstract
The introduction of the multi-beam mask writer has made it possible to introduce non-Manhattan shapes on photomasks with no write-time penalty compared to the standard rectilinear mask shapes. While it has been known for some time that removing the Manhattan restriction on OPC output not only allows for improved process window, more recently it has also been demonstrated that it improves mask CD uniformity (CDU). When crucial mask rules are followed, most notably a minimum allowable curvature, we assess the CDU changes at the mask level for an MRC-constrained correction, as compared to either Manhattan or unconstrained corrections. An AIMS analysis was performed to estimate the effect at the optical plane. Lastly, we contrast differences in the CDU as transferred to resist in EUV lithography. We conclude with a view as to the challenges left to enabling high-volume manufacturing of all-angle shapes.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ryan Pearman, Ragu Venkatesan, Arvind Sundaramurthy, Patrick Straney, Zach Rice, Rusty Conner, and Harsha Grunes "A CD uniformity study comparing MRC-constrained all-angle to Manhattan OPC corrections on EUV", Proc. SPIE 12495, DTCO and Computational Patterning II, 124950F (30 April 2023); https://doi.org/10.1117/12.2662761
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KEYWORDS
Photomasks

Optical proximity correction

Extreme ultraviolet

Extreme ultraviolet lithography

High volume manufacturing

Optics manufacturing

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