Poster + Paper
1 May 2023 The damage control of sub layer while ion-driven etching with vertical carbon profile implemented
Author Affiliations +
Conference Poster
Abstract
As device scale down to sub 3nm, NMOS/PMOS boundary patterning becomes critical in logic product. This patterning requires highly directional etching while maintaining high selectivity to the base metal layer. In this paper, we demonstrated that the ion energy has the trade-off between the profile verticality and the surface damage. The ion energy was strongly controlled by the bias voltage and surface damage was improved with lower bias voltage, but profile verticality was deteriorated because of the ion angle dispersion. To enhance the profile verticality the carbon rich gas was added as the top passivation. The proposed method will be a practical in sub-3nm logic boundary patterning.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
SeungJin Mun, Lina Yoo, Jongdeok Hong, Junyeong Ahn, Kyung-yub Jeon, and Keunhee Bai "The damage control of sub layer while ion-driven etching with vertical carbon profile implemented", Proc. SPIE 12499, Advanced Etch Technology and Process Integration for Nanopatterning XII, 124990J (1 May 2023); https://doi.org/10.1117/12.2657249
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Etching

Ions

Optical lithography

Metals

Carbon

Logic

Passivation

Back to Top