CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 12617 > Article
Paper
4 April 2023 Study on energy band regulation of field-assisted GaSb photocathode
Jinjuan Du, Zhifeng Xu, Yang Li, Linyu Gan, Haoyu Wu, Peng Chen
Author Affiliations +
Proceedings Volume 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications; 126174S (2023) https://doi.org/10.1117/12.2666386
Event: Ninth Symposium on Novel Photoelectronic Detection Technology and Applications (NDTA 2022), 2022, Hefei, China
Abstract
Silvaco simulation software was used to study the influence of applied bias on the energy band of field-assisted GaSb/GaAs photocathode under different thicknesses and p-type doping concentrations of GaAs emission layer. The simulation results demonstrated that only 2V applied bias voltage can perfectly eliminate the barrier at the heterojunction interface and will not cause a large dark current when the GaSb layer was p-type with the doping concentration of 1×1019 cm-3 and the GaAs emission layer was gradient doping. The GaAs emitting layer with gradient doping consists of a GaAs layer with a thickness of 0.2 μm and a doping concentration of 1×1016 cm-3, GaAs layer with a thickness of 0.2 μm and a doping concentration of 1×1017 cm-3, and GaAs layer with a thickness of 0.2 μm and a doping concentration of 1×1018 cm-3. This simulation study provides theoretical guidance for the preparation of field-assisted GaSb/GaAs photocathode.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Jinjuan Du, Zhifeng Xu, Yang Li, Linyu Gan, Haoyu Wu, and Peng Chen "Study on energy band regulation of field-assisted GaSb photocathode", Proc. SPIE 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications, 126174S (4 April 2023); https://doi.org/10.1117/12.2666386
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 8 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Gallium arsenide
Doping
Gallium antimonide
Heterojunctions
Conduction bands
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top