Paper
1 June 1990 Improved CD uniformity as a function of developer chemistry and process parameters derived from a statistically designed experiment
Lorna D.H. Christensen, Ken L. Bell, Nadine A. Acuna
Author Affiliations +
Abstract
A series of experiments was run to determine the chemical and process effects on CD uniformity for Dynachem's new dyed photoresist, NOVA 2050 AR, when developed with metal ion free and metal ion type developers. The matrix of experiments included variations in spray time and puddle time, but with the constraint that all experiments had the same total time for spray and puddle times. In order to do this type of matrix it was necessary to make an unusual use of a mixture model to devise the experimental design. The design was devised to look at the effects of one-puddle, twopuddle, three-puddle and all-spray processes. Also, the effect of using either metal ion free or metal type developers was examined by running the matrix with Dynalith EPD-85 and DE-3 (0.5%) as respective examples of the two developer types. Before beginning the above matrix the baseline parameters for nozzle position, puddle time, spray time, spray speed, pre-wet time, spray pressure and spray time were determined via a Plackett- Burinan design of experiments. These three studies when compiled and analyzed with the statistical software package, RS-l, served to separate the effects of process parameters and developer type according to their effect on CD uniformity. These results suggest that three-puddle metal ion free develop processes were superior. Graphs will be shown that illustrate which parameters are the most influential concerning CD uniformity. A mathematical model will be presented that will allow the calculation of the standard deviation for CD uniformity with 95% confidence for any given set of spray and puddle times. These data and models will thereby give guidance to the process engineer how to best use developer type and process in order to obtain the best CD uniformity for a 1.0 micron process.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lorna D.H. Christensen, Ken L. Bell, and Nadine A. Acuna "Improved CD uniformity as a function of developer chemistry and process parameters derived from a statistically designed experiment", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20122
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KEYWORDS
Critical dimension metrology

Metals

Ions

Photoresist developing

Chemistry

Semiconducting wafers

Photoresist processing

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