Study of the semiconductor materials influence in measuring technology on the measure efficiency in upper layers of the atmosphere

Andrey A. Udalov; Evgenii V. Shesterikov

doi:10.1117/12.2690986

17 October 2023 Study of the semiconductor materials influence in measuring technology on the measure efficiency in upper layers of the atmosphere

Andrey A. Udalov, Evgenii V. Shesterikov

Author Affiliations +

Proceedings Volume 12780, 29th International Symposium on Atmospheric and Ocean Optics: Atmospheric Physics; 127807M (2023) https://doi.org/10.1117/12.2690986
Event: XXIX International Symposium "Atmospheric and Ocean Optics, Atmospheric Physics", 2023, Moscow, Russian Federation

Abstract

Currently, the basic semiconductor materials used in measurement technology are naturally silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), indium gallium arsenide (InGaAs) used in photodiodes. Semiconductor heterostructures, such as AlGaN/GaN, are less common. However there is no choosing methodology for semiconductor materials that are dedicated to work in upper layers atmosphere conditions, where cosmic radiation is, which will interfere with the operation of communication devices, detectors, solar panels. In this paper, we consider a possible approach to the analysis of semiconductor material (elements, heterostructures) properties for their suitability for operation under the influence of cosmic radiation fluxes on them. The end result of this work is a system for assessing the stability of research equipment and communication devices.

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Andrey A. Udalov and Evgenii V. Shesterikov "Study of the semiconductor materials influence in measuring technology on the measure efficiency in upper layers of the atmosphere", Proc. SPIE 12780, 29th International Symposium on Atmospheric and Ocean Optics: Atmospheric Physics, 127807M (17 October 2023); https://doi.org/10.1117/12.2690986

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