In this work, the growth kinetics of silicon by Remote Plasma-enhanced Chemical Vapor
Deposition (RPCVD) have been investigated. Growth rate has been characterized for temperatures
ranging from 150°C to 480°C, r-f powers between 4 and 8 W, 5 -30 sccm of diluted (2%) silane flow,
and 200 mTorr chamber pressure. The growth rate has been found to be relatively insensitive to silane
partial pressure, indicating that dissociation of silane is not likely to be the rate limiting step. The
activation energy for growth changes at -'325°C, and this is believed to be due to a change in the stable
hydrogen termination of the silicon surface at this temperature. This implies that the rate limiting step for
the reaction is hydrogen desorption. Growth rate dependence on substrate bias suggests that argon ions
are responsible for driving the surface reactions.
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