Presentation + Paper
13 March 2024 Investigation of passive mode-locking and self-mode-locking in two-section monolithic QD and QW lasers
Author Affiliations +
Abstract
In this study, we conduct a comparative analysis of an InAs/InP quantum dot diode laser and an InGaAsP/InP quantum well laser. Both lasers are monolithic, 840 μm long devices. They have a two-part buried heterostructure with 10%/90% reflection coated facets and emit at 1550 nm (quantum dot laser) respectively 1570 nm (quantum well laser). In passive mode-locking operational mode, the larger section of both devices is continuously pumped with forward current, while the second, smaller section (50 μm) is operated with reverse absorber voltage. In self mode-locking operation both sections of the laser are connected and pumped with forward current. Femtosecond pulses have been detected in both operational modes.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Navina Kleemann, Nils Surkamp, Philipp Scherer, Rejdi Gjoni, Carsten Brenner, Marcel van Delden, Martin Moehrle, and Martin R. Hofmann "Investigation of passive mode-locking and self-mode-locking in two-section monolithic QD and QW lasers", Proc. SPIE 12905, Novel In-Plane Semiconductor Lasers XXIII, 129050R (13 March 2024); https://doi.org/10.1117/12.3000196
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KEYWORDS
Autocorrelation

Mode locking

Semiconductor lasers

Quantum wells

Pulsed laser operation

Quantum dot lasers

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