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All-inorganic mixed-halide perovskites are promising materials for a number of photonic and optoelectronic applications. Decent progress has been made in the field of the synthesis of their high-quality nano- and microcrystals exhibiting bright excitonic photoluminescence and laser generation tunable in a wide spectral range. However, the engineering of high-performance optoelectronic devices demonstrating long-term operational stability is challenging because of non-balanced charge carrier injection, Joule heating, and corrosion of metal electrodes. To balance charge carrier injection sandwich structures containing various electron- and hole-transport layers have been reported. To tackle the rest two issues utilization of a high thermal conductivity sapphire substrate as well as carbon electrodes could be the best choice. Herein, we employ 1030 nm fs laser source for the ablation of mixed-halide CsPb(Cl,Br)3 microwires grown on sapphire and covered with a single-walled carbon nanotube (SWCNT) thin film to produce planar microstructures of SWCNT/perovskite/SWCNT type. It is established, for CsPb(ClxBr1−x)3, the damage threshold value increases linearly with chlorine content in the crystal lattice and goes beyond one for cut SWCNT thin film (F0 = 0.68 J cm−2) when x ≥ 0.4. Thus, simple microdevices with tunable electroluminescence and spectral responsivity can be produced. We believe our findings will speed up progress in the development of a new platform for planar optoelectronics.
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