Paper
24 November 2023 Unraveling the origin of dominant exciton and band structure details in bilayer MoTe2
Zhen Wang, Hao Sun, Jiacheng Tang, Kun Yin, Cun-Zheng Ning
Author Affiliations +
Proceedings Volume 12935, Fourteenth International Conference on Information Optics and Photonics (CIOP 2023); 129351C (2023) https://doi.org/10.1117/12.3005937
Event: Fourteenth International Conference on Information Optics and Photonics (CIOP 2023), 2023, Xi’an, China
Abstract
Bilayer molybdenum ditelluride (MoTe2) exhibits promising research potential in silicon-based optoelectronics due to its near-infrared emission band. Although previous studies have shown that the direct and indirect bandgaps are closely located, the origin of the dominant exciton in photoluminescence (PL) emission and the energy difference between the direct and indirect bandgaps remain uncertain. To address these issues, we performed comprehensive micro-PL and absorption measurements on monolayer and bilayer samples, incorporating electrical control, across a wide temperature range of 4 to 300 K. These systematic measurements determined that the dominant PL emission in bilayer MoTe2 arises from an intralayer exciton with a direct bandgap and the energy difference between the direct and indirect bandgaps in the bubble-strained bilayer sample with a strain of approximately 1% was estimated to be around 10 meV in experiment, consistent with theoretical calculations in the literature.
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Zhen Wang, Hao Sun, Jiacheng Tang, Kun Yin, and Cun-Zheng Ning "Unraveling the origin of dominant exciton and band structure details in bilayer MoTe2", Proc. SPIE 12935, Fourteenth International Conference on Information Optics and Photonics (CIOP 2023), 129351C (24 November 2023); https://doi.org/10.1117/12.3005937
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Excitons

Monolayers

Absorption

Temperature metrology

2D materials

Silicon

Optoelectronics

Back to Top