A study of bitline contact process variation on DRAM performance and DVC/BVC failures using virtual fabrication

Yujia Zhong; Qingpeng Wang; Dempsey Deng; Benjamin Vincent; Joseph Ervin

doi:10.1117/12.3010213

10 April 2024 A study of bitline contact process variation on DRAM performance and DVC/BVC failures using virtual fabrication

Yujia Zhong, Qingpeng Wang, Dempsey Deng, Benjamin Vincent, Joseph Ervin

Author Affiliations +

Proceedings Volume 12954, DTCO and Computational Patterning III; 129541G (2024) https://doi.org/10.1117/12.3010213
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

Bitline contact (BLC), bitline (BL), and node contact (NC) fabrication are three interacting process loops during DRAM fabrication. BLC characteristics play an important role in subsequent BL and NC process loops. The complex structure of DRAM increases the difficulty of identifying the impact of BLC process variations on device shorts (BVC test failures) and device opens (DVC test failures). In this work, virtual DOEs using SEMulator3D® (Lam Research’s virtual fabrication platform) were carried out to better understand the effect of BLC characteristics on DVC and BVC failures, including BLC X and Y axis CD, etch sidewall angles, overlay (OVL) shift and roughness. From our studies, we have developed optimized process specification for X and Y axis CD, etch sidewall angles, OVL shift, and roughness during the bitline contact process loop. The results of this type of experiment can help developers identify key specifications and save resources during the early design phase of DRAM process development.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

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Yujia Zhong, Qingpeng Wang, Dempsey Deng, Benjamin Vincent, and Joseph Ervin "A study of bitline contact process variation on DRAM performance and DVC/BVC failures using virtual fabrication", Proc. SPIE 12954, DTCO and Computational Patterning III, 129541G (10 April 2024); https://doi.org/10.1117/12.3010213

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