Presentation + Paper
7 June 2024 Near bandgap absorption and carrier transport in InAs/InAsSb superlattice devices
Author Affiliations +
Abstract
In mid-wavelength infrared detectors built with the InAs/InAsSb superlattice, a study of the absorption behavior near the cutoff wavelength was conducted. Two results are, first, an accurate method for determining the bandgap energy from the spectral response of a fabricated device, and second, an analysis of the Urbach tail of the absorption showing that its characteristic energy is consistent with the dominant phonon of InAs. Additionally, a temperature-dependent measurement of the transport of photo-generated holes in nBn devices can be used to identify the effects of localization due to layer nonuniformities, and to measure the energy step at hole-blocking features.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
David R. Rhiger "Near bandgap absorption and carrier transport in InAs/InAsSb superlattice devices", Proc. SPIE 13046, Infrared Technology and Applications L, 130460O (7 June 2024); https://doi.org/10.1117/12.3014943
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KEYWORDS
Superlattices

Absorption

Light absorption

Spectral response

Quantum efficiency

Phonons

Quantum measurement

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