The fusion of spintronics and photonics technologies is expected to reduce significantly the energy consumption of information systems. Opto-spintronic semiconductors, that can function as spin-photon interfaces, are essential for optical communication of electron spin information. However, the spin polarization of electrons is easily lost in conventional nonmagnetic semiconductors at and above room temperature (RT), at which today’s devices operate. In this work, I have focused on the 0D-2D hybrid nanostructures based on III-V semiconductor quantum dots (QDs) and dilute nitride GaNAs with defect-enabled spin filtering working at RT. I have demonstrated not only the efficient spin-photon conversion at RT by using the InGaAs-based QDs buried in a thin quantum well (QW), but also the generation of nearly fully spin-polarized electrons in the QDs by tunnel injecting spin filtered electrons from the GaNAs QW to InAs QDs. The amplification dynamics of electron spin polarization in the GaNAs/QD tunnel-coupled nanostructures was investigated by a combination of time-resolved circularly polarized photoluminescence and rate equation considering the spin capturing time in the GaNAs defect states. The GaNAs/QD structures have been used as active layers of spin-polarized light-emitting diodes and electric field effect optical spin devices operating at RT. In addition, the spin filtering of GaNAs has been utilized for the spin photodiode to recover the spin polarization of conduction band electrons. These results indicate that 0D QD-2D GaNAs QW hybrid nanostructures are promising spin-photon interfaces operating in practical conditions.
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