Optimization of SI3N4 nanophotonic resonator taking into account the substrate influence

A. I. Garifullin; N. M. Arslanov

doi:10.1117/12.3026578

6 September 2024 Optimization of SI3N4 nanophotonic resonator taking into account the substrate influence

A. I. Garifullin, N. M. Arslanov

Author Affiliations +

Proceedings Volume 13168, Optical Technologies for Telecommunications 2023; 131681J (2024) https://doi.org/10.1117/12.3026578
Event: Optical Technologies for Telecommunications 2023, 2023, Kazan, Russian Federation

Abstract

A nanophotonic resonator with high Q-factor and low mode volume is a promising system for creating optoelectronic devices on a chip and enhancing the light-matter interaction. In this work, the parameters of a silicon nitride nanophotonic resonator have been optimized to generate high-quality resonant states. The calculations were carried out using a deterministic method of achieving high Q-factor values.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

A. I. Garifullin and N. M. Arslanov "Optimization of SI3N4 nanophotonic resonator taking into account the substrate influence", Proc. SPIE 13168, Optical Technologies for Telecommunications 2023, 131681J (6 September 2024); https://doi.org/10.1117/12.3026578

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