Enhancing lithography precision: characterizing resist profiles in semiconductor manufacturing with rapid probe microscopy

L. Feng; V. Panchal; R. Thorogate; J. Robinson; J. Cossins; A. D. L. Humphris; V. Vaenkatesan; J. Finders

doi:10.1117/12.3034551

12 November 2024 Enhancing lithography precision: characterizing resist profiles in semiconductor manufacturing with rapid probe microscopy

L. Feng, V. Panchal, R. Thorogate, J. Robinson, J. Cossins, A. D. L. Humphris, V. Vaenkatesan, J. Finders

Author Affiliations +

Proceedings Volume 13215, International Conference on Extreme Ultraviolet Lithography 2024; 132150A (2024) https://doi.org/10.1117/12.3034551
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States

Abstract

The lithography process in semiconductor manufacturing demands precise control over focus and exposure parameters to achieve optimal lithographic outcome for the structures being printed. It has become increasingly important to fully characterize the resist (3 dimensional) profile after development, since it is known that the optimum focus level and exposure dose may differ according to the parameter in question. For example, the optimal settings for CD and for minimizing stochastics effects may not be the same. In this study, we demonstrate the use of Rapid Probe Microscopy (RPM) to evaluate a Focus-Exposure-Matrix (FEM) in EUV lithography. RPM offers deep sub nanometre resolution and true 3-dimensional measurement, enabling the characterisation of variations critical to the lithographic process.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

L. Feng, V. Panchal, R. Thorogate, J. Robinson, J. Cossins, A. D. L. Humphris, V. Vaenkatesan, and J. Finders "Enhancing lithography precision: characterizing resist profiles in semiconductor manufacturing with rapid probe microscopy", Proc. SPIE 13215, International Conference on Extreme Ultraviolet Lithography 2024, 132150A (12 November 2024); https://doi.org/10.1117/12.3034551

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