The two-mask stage scanner for High-NA EUV lithography

Kiwamu Takehisa

doi:10.1117/12.3033265

12 November 2024 The two-mask stage scanner for High-NA EUV lithography

Kiwamu Takehisa

Author Affiliations +

Proceedings Volume 13215, International Conference on Extreme Ultraviolet Lithography 2024; 132150U (2024) https://doi.org/10.1117/12.3033265
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States

Conference Poster

Abstract

Since a high-NA EUV scanner has a half field size, two masks are necessary for exposing a chip larger than the half field. However, it takes long time until exposing the 2nd half field after the 1st half exposure since many wafers need to be exposed before changing the mask not to reduce the throughput. We proposed a new scan method which enables to contact the two exposed areas using two masks which are held at a single mask stage. This gives almost no delay time for the 2nd exposure. Moreover, the throughput is improved by 1.5 to 1.7 times, which is ~90% of that of a scanner with a 6”x12” mask. However, since holding the two masks on the stage completely coaxially is difficult, a substitute exposure method is considered based on the two-mask stage. At first, the 1st exposure is provided for all the chips in a wafer with the 1st mask. Next, the 2nd exposure is provided for all the chips on the same wafer with the 2nd mask. Since switching the illuminated mask can be quick, the throughput is still higher than a single 6”x6” mask stage scanner.

Citation Download Citation

Kiwamu Takehisa "The two-mask stage scanner for High-NA EUV lithography", Proc. SPIE 13215, International Conference on Extreme Ultraviolet Lithography 2024, 132150U (12 November 2024); https://doi.org/10.1117/12.3033265

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