The influence of reflectivity on EUV lithography performance of low-n and binary masks for random logic via implementation

Ling Ee Tan; Fergo Treska; Werner Gillijns; Jeroen Van de Kerkhove; Peter De Bisschop; Vicky Philipsen; Ryoung-han Kim

doi:10.1117/12.3034348

22 November 2024 The influence of reflectivity on EUV lithography performance of low-n and binary masks for random logic via implementation

Ling Ee Tan, Fergo Treska, Werner Gillijns, Jeroen Van de Kerkhove, Peter De Bisschop, Vicky Philipsen, Ryoung-han Kim

Author Affiliations +

Proceedings Volume 13216, Photomask Technology 2024; 132161C (2024) https://doi.org/10.1117/12.3034348
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States

Abstract

Novel mask absorber materials have been explored to improve EUV imaging performance which includes a variation of film thickness, refraction index n and the extinction coefficient k. A few promising mask absorber candidates were fabricated and evaluated using imec patterning on random logic via design with minimum pitch of 36nm. This study compares the lithography performance of low-n EUV masks with different reflectivity to our Ta-based EUV mask reference. The masks are designed with resolution enhancement techniques (RET) including source-mask optimization (SMO), optical proximity correction (OPC) and sub-resolution assist feature (SRAF) to achieve optimum mask to imaging performance. This work discusses the random logic via patterning benefits and limitations using different low-n EUV masks, along with the potential to extend the resolution of NA0.33 EUV lithography to random logic via designs down to 32nm pitch.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

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Ling Ee Tan, Fergo Treska, Werner Gillijns, Jeroen Van de Kerkhove, Peter De Bisschop, Vicky Philipsen, and Ryoung-han Kim "The influence of reflectivity on EUV lithography performance of low-n and binary masks for random logic via implementation", Proc. SPIE 13216, Photomask Technology 2024, 132161C (22 November 2024); https://doi.org/10.1117/12.3034348

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