Paper
7 August 2024 Design of a low-temperature drift voltage reference based on parasitic capacitance startup
Lu Zhou
Author Affiliations +
Proceedings Volume 13229, Seventh International Conference on Advanced Electronic Materials, Computers, and Software Engineering (AEMCSE 2024); 132290C (2024) https://doi.org/10.1117/12.3037937
Event: Seventh International Conference on Advanced Electronic Materials, Computers, and Software Engineering (AEMCSE 2024), 2024, Nanchang, China
Abstract
To enhance the performance of the PMU, a voltage reference based on a voltage bandgap has been proposed. During the power-on process, the startup circuit is activated due to parasitic capacitance coupling. After the power-on process is completed, the startup circuit self-turns off to reduce power consumption. Subsequently, a high-order compensation circuit is designed to generate a current with only constant and high-order temperature terms, compensating for the temperature coefficient of the voltage bandgap. An RC filter is then added to the output to improve the power supply rejection ratio in the high-frequency range. To further reduce the power consumption of the voltage bandgap, almost all MOS transistors are operated in the subthreshold region, achieving a decrease in static current consumption. Circuit design and simulation were completed based on the TSMC 0.18 μm CMOS process. The results indicated that at a supply voltage of 1.8 V, the bandgap output was 1.232 V; within the temperature range of -40 ℃ to 140 ℃, the temperature coefficient was 4.8×10–6–1; with the addition of the RC filter, the power supply rejection ratio at high frequency was -73 dB @ 10 MHz; furthermore, the static current of the entire bandgap was only 3.7 μA
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Lu Zhou "Design of a low-temperature drift voltage reference based on parasitic capacitance startup", Proc. SPIE 13229, Seventh International Conference on Advanced Electronic Materials, Computers, and Software Engineering (AEMCSE 2024), 132290C (7 August 2024); https://doi.org/10.1117/12.3037937
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KEYWORDS
Transistors

Power consumption

Design

Molybdenum

Power supplies

Capacitance

Temperature metrology

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