Frequency-modulated continuous-wave laser source based on four-wave mixing process in a silicon integrated waveguide doped with reverse-biased P-i-N junction

Xinyan Zhang; Keqi Cao; Wei Lin; Jia Chen; Hang Yu; Xiaonan Chen; JinHua Bai; Haiqing Yuan; Ninghua Zhu; Ming Li; Kunpeng Zhai; Yu Liu

doi:10.1117/12.3034263

8 November 2024 Frequency-modulated continuous-wave laser source based on four-wave mixing process in a silicon integrated waveguide doped with reverse-biased P-i-N junction

Xinyan Zhang, Keqi Cao, Wei Lin, Jia Chen, Hang Yu, Xiaonan Chen, JinHua Bai, Haiqing Yuan, Ninghua Zhu, Ming Li, Kunpeng Zhai, Yu Liu

Author Affiliations +

Proceedings Volume 13233, Semiconductor Lasers and Applications XIV; 132330A (2024) https://doi.org/10.1117/12.3034263
Event: SPIE/COS Photonics Asia, 2024, Nantong, Jiangsu, China

Abstract

In this paper, we propose and demonstrate a Frequency Modulated Continuous Wave (FMCW) laser source realized through sideband modulation and four-wave mixing (FWM). A silicon waveguide, featuring a reverse-biased P-i-N junction, is designed to excite FWM process. The FWM process in silicon waveguide expand threefold frequency sweeping span to 6 GHz, thereby enhancing spatial resolution to 2.5 cm. The original tuning range of 2 GHz and tuning rate of 0.2 GHz/s is multiplied by three times to 6 GHz and 0.6 GHz/μs respectively. The frequency-modulated light source exhibits excellent linearity, low noise, narrow linewidth, and fast tuning rates, which are critical attributes for modern electrical systems.

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Xinyan Zhang, Keqi Cao, Wei Lin, Jia Chen, Hang Yu, Xiaonan Chen, JinHua Bai, Haiqing Yuan, Ninghua Zhu, Ming Li, Kunpeng Zhai, and Yu Liu "Frequency-modulated continuous-wave laser source based on four-wave mixing process in a silicon integrated waveguide doped with reverse-biased P-i-N junction", Proc. SPIE 13233, Semiconductor Lasers and Applications XIV, 132330A (8 November 2024); https://doi.org/10.1117/12.3034263

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