Simulation and analysis of multilayer film for EUV lithography

Haoyu Wang; Shan Gao; Yujiao Li; Lyudmila A. Gubanova; Elena A. Tsyganok

doi:10.1117/12.3036153

27 November 2024 Simulation and analysis of multilayer film for EUV lithography

Haoyu Wang, Shan Gao, Yujiao Li, Lyudmila A. Gubanova, Elena A. Tsyganok

Author Affiliations +

Proceedings Volume 13237, Optical Design and Testing XIV; 132371G (2024) https://doi.org/10.1117/12.3036153
Event: SPIE/COS Photonics Asia, 2024, Nantong, Jiangsu, China

Conference Poster

Abstract

Extreme ultraviolet lithography uses a light source with a wavelength of about 10nm-14 nm for illumination, and almost all known optical materials have strong absorption in this band. Therefore, the extreme ultraviolet lithography optical systems used reflective design, the reflective optical elements need to be coated with multilayers film to improve reflectivity. The choice of multilayers material and thickness of reflective optics is a key factor affecting their reflectivity in this wavelength bands. Currently, Mo/Si multilayer thin-film reflectors are used in extreme ultraviolet lithography optical systems. And in the 10nm-20nm band, Nb/Si multilayer films can also be used. In this research, the influence of factors including incident angle, operating wavelength, and film thickness on the corresponding reflectance of two multilayer reflective film structures is analyzed through mathematical modeling using Mathcad.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

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Haoyu Wang, Shan Gao, Yujiao Li, Lyudmila A. Gubanova, and Elena A. Tsyganok "Simulation and analysis of multilayer film for EUV lithography", Proc. SPIE 13237, Optical Design and Testing XIV, 132371G (27 November 2024); https://doi.org/10.1117/12.3036153

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