High-precision GaN surface defect detection based on quadriwave lateral shearing interferometry

Chao Qian; Yao Li; Qingpo Wu

doi:10.1117/12.3049706

18 November 2024 High-precision GaN surface defect detection based on quadriwave lateral shearing interferometry

Chao Qian, Yao Li, Qingpo Wu

Author Affiliations +

Proceedings Volume 13398, Fourth International Conference on Optics and Communication Technology (ICOCT 2024); 133980Q (2024) https://doi.org/10.1117/12.3049706
Event: Fourth International Conference on Optics and Communication Technology (ICOCT 2024), 2024, Nanjing, China

Abstract

With the continuous development of the semiconductor industry, advanced chip manufacturing technology has reached the node of 5 nm and below, and wafer defects will inevitably occur in the manufacturing process. These tiny defects will lead to chip failure and significantly affect product yield. Semiconductor wafer manufacturing involves multiple stages, each of which introduces surface defects that affect the quality of lithography and cause device characteristics to fail. Therefore, it is very important to detect the surface defects of bare wafers. In this paper, a high-precision detection method based on quadriwave lateral shear interferometry (QLSI) is proposed, which can detect nanoscale height changes with high sensitivity and provide wafer surface topology measurement. The non-contact technology avoids the damage caused by probe contact, realizes efficient and real-time detection, reduces production costs and improves product quality.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Chao Qian, Yao Li, and Qingpo Wu "High-precision GaN surface defect detection based on quadriwave lateral shearing interferometry", Proc. SPIE 13398, Fourth International Conference on Optics and Communication Technology (ICOCT 2024), 133980Q (18 November 2024); https://doi.org/10.1117/12.3049706

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