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10 December 2024 Wiener-Padé model for lithographic resist modeling
Chunxiao Mu, Song Zhang, David H. Wei, Hao Jiang, Shiyuan Liu
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Proceedings Volume 13423, Eighth International Workshop on Advanced Patterning Solutions (IWAPS 2024); 1342315 (2024) https://doi.org/10.1117/12.3053047
Event: 8th International Workshop on Advanced Patterning Solutions (IWAPS 2024), 2024, Jiaxing, Zhejiang, China
Abstract
Optical proximity correction (OPC) is an essential technique for enhancing photolithographic image quality. Its effectiveness and efficiency largely depend on accurate resist modeling. The resist exposure and development processes involve complex nonlinear physicochemical reactions, presenting significant challenges for fast and precise modeling required for OPC. In our work, a Wiener-Padé resist model is proposed. Through various experiments, we validate that the Wiener-Padé model delivers excellent performance in terms of accuracy, generality, and speed. The proposed resist modeling method offers significant potential for advancing photolithography modeling and OPC in contemporary semiconductor manufacturing.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Chunxiao Mu, Song Zhang, David H. Wei, Hao Jiang, and Shiyuan Liu "Wiener-Padé model for lithographic resist modeling", Proc. SPIE 13423, Eighth International Workshop on Advanced Patterning Solutions (IWAPS 2024), 1342315 (10 December 2024); https://doi.org/10.1117/12.3053047
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KEYWORDS
Modeling
Optical proximity correction
Calibration
Lithography
Photoresist processing
Systems modeling
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