TransUNet-based end-to-end proximity effect correction for electron beam lithography

Hongwei Huang; Haolan Wang; Yuyang Liu; Sikun Li

doi:10.1117/12.3053060

10 December 2024 TransUNet-based end-to-end proximity effect correction for electron beam lithography

Hongwei Huang, Haolan Wang, Yuyang Liu, Sikun Li

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Proceedings Volume 13423, Eighth International Workshop on Advanced Patterning Solutions (IWAPS 2024); 1342317 (2024) https://doi.org/10.1117/12.3053060
Event: 8th International Workshop on Advanced Patterning Solutions (IWAPS 2024), 2024, Jiaxing, Zhejiang, China

Abstract

Electron Beam Lithography (EBL) has advantages in high resolution imaging. However, its resolution was limited by the proximity effect due to electron backscattering in solid materials. Current methods for correction of proximity effects, such as dose and shape corrections, are effective in improving accuracy, but their time cost is not negligible. This paper presents a method that uses TransUNet, trained with the results of traditional dose correction methods, to create an end-to-end model. This method maintains accuracy, simplifies data processing to improve computational efficiency, and enhances ease of use.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Hongwei Huang, Haolan Wang, Yuyang Liu, and Sikun Li "TransUNet-based end-to-end proximity effect correction for electron beam lithography", Proc. SPIE 13423, Eighth International Workshop on Advanced Patterning Solutions (IWAPS 2024), 1342317 (10 December 2024); https://doi.org/10.1117/12.3053060

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KEYWORDS

Education and training

Machine learning

Electron beam lithography

Monte Carlo methods

Point spread functions

Data processing

Data modeling

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