Study on interaction between bottom SiARC and photoresist

Xianguo Dong; Qin Yuan; Baotong Chen; Jiantao Wang; Shirui Yu; Yu Zhang

doi:10.1117/12.3053124

10 December 2024 Study on interaction between bottom SiARC and photoresist

Xianguo Dong, Qin Yuan, Baotong Chen, Jiantao Wang, Shirui Yu, Yu Zhang

Author Affiliations +

Proceedings Volume 13423, Eighth International Workshop on Advanced Patterning Solutions (IWAPS 2024); 134231C (2024) https://doi.org/10.1117/12.3053124
Event: 8th International Workshop on Advanced Patterning Solutions (IWAPS 2024), 2024, Jiaxing, Zhejiang, China

Abstract

In general, the NTD and PTD processes use a mix of anti-reflective and photoresist materials, which were influenced by two identified factors: Acid-base balance and surface tension matching. This paper focus on positive development process which involves washing away overexposed areas and leaving on unexposed areas. Therefore, to reflect good hydrophobicity and demonstrate superior adhesion in non-exposed regions, the anti-reflective substance must be linked to the photoresist. Acid-base unbalance can lead to a significant reduction in exposure and increase the chance of failure. If the acidity of the Anti-reflective material is excessive, it will make the bottom of the photoresist form undercut profile due to too much photo acid, which will lead to dense graphic collapse. In order to prevent the undercut profile effect, we determine the reason by using the failure mechanism, which uses alkaline substances to suitably neutralize the quantity of photo acid at the bottom. This eliminates the influence of the photo acid reaction at the bottom that contributes to the formation of a normal graph.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Xianguo Dong, Qin Yuan, Baotong Chen, Jiantao Wang, Shirui Yu, and Yu Zhang "Study on interaction between bottom SiARC and photoresist", Proc. SPIE 13423, Eighth International Workshop on Advanced Patterning Solutions (IWAPS 2024), 134231C (10 December 2024); https://doi.org/10.1117/12.3053124

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Photoresist materials

Capillaries

Interfaces

Windows

Adhesion

Integrated circuits

Liquids

Show All Keywords

Keywords/Phrases

Search In:

Publication Years