Paper
13 December 2024 Design, fabrication, and measurement of 500-750 GHz silicon waveguide transitions based on gap waveguide
Yaohui Yang, Shunli Han, Yajing Liu, Jinpeng Yang, Ting Zhang
Author Affiliations +
Proceedings Volume 13495, AOPC 2024: Terahertz Technology and Applications; 1349508 (2024) https://doi.org/10.1117/12.3046009
Event: Applied Optics and Photonics China 2024 (AOPC2024), 2024, Beijing, China
Abstract
The design, fabrication and measurement process of silicon based waveguide transitions working from 500 GHz to 750 GHz is reported in this paper. Gap waveguide is applied to the waveguide cavity design. The electromagnetic bandgap characteristic helps to split the three dimensional structure into slices. Hence the waveguide transition could be composed of thin gold coating silicon layers. Micro-electro-mechanical system (MEMS) technology is used for the fabrication of periodic pins and multi-step transitions. A metallic clamp is designed for measurement. Measured results show that the transmission loss is better than 0.13 dB/mm and the reflection coefficient is lower than -9 dB.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Yaohui Yang, Shunli Han, Yajing Liu, Jinpeng Yang, and Ting Zhang "Design, fabrication, and measurement of 500-750 GHz silicon waveguide transitions based on gap waveguide", Proc. SPIE 13495, AOPC 2024: Terahertz Technology and Applications, 1349508 (13 December 2024); https://doi.org/10.1117/12.3046009
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KEYWORDS
Waveguides

Silicon

Design

Fabrication

Reflection

Microelectromechanical systems

Terahertz radiation

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