Atomic scale simulation of the growth of CdTe layers on GaAs

Mehdi Djafari Rouhani; M. Laroussi; A. M. Gue; Daniel Esteve

doi:10.1117/12.24322

1 March 1991 Atomic scale simulation of the growth of CdTe layers on GaAs

Mehdi Djafari Rouhani, M. Laroussi, A. M. Gue, Daniel Esteve

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24322
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The initial stages of the growth of CdTe on (100) GaAs with 14. 7 lattice mismatch has been simulated. It is shown that growth in (111) direction with the presence of twins is always preferred on perfect substrate surfaces. In the case of growth in (100) direction misfit dislocations are formed. The critical thickness is evaluated by extrapolation to be 6 - 8 atomic monolayers .

Citation Download Citation

Mehdi Djafari Rouhani, M. Laroussi, A. M. Gue, and Daniel Esteve "Atomic scale simulation of the growth of CdTe layers on GaAs", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24322

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