Paper
1 February 1991 Optical nonlinearities in ZnSe multiple-quantum-wells
Yudong Liu, Shutian Liu, Chunfei Li, De Zen Shen, Xiwu Fan, Guang Han Fan, Lian Chun Chen
Author Affiliations +
Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24558
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
We have measured the nonlinear absorption and nonlinear refractive index changes in ZnSe''ZnS multiple quantum wells at low temperature. The largest change of nonlinear refractive index is 0. 012 and corresponding n2 is 7x1Ocm2IW. The nonlinear mechanism are attributed to exciton band broadening and phase space filling of exciton states. With different excitation wavelengths we have demonstrated the dynamic optical bistabilities in ZnSe/ZnS MQWs.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yudong Liu, Shutian Liu, Chunfei Li, De Zen Shen, Xiwu Fan, Guang Han Fan, and Lian Chun Chen "Optical nonlinearities in ZnSe multiple-quantum-wells", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24558
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KEYWORDS
Excitons

Absorption

Nonlinear optics

Optoelectronic devices

Bistability

Gallium arsenide

Physics

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