GaAs opto-thyristor for pulsed power applications

Jung H. Hur; Peyman Hadizad; Hanmin Zhao; Steven G. Hummel; Paul Daniel Dapkus; Harold R. Fetterman; Martin A. Gundersen

doi:10.1117/12.25066

1 March 1991 GaAs opto-thyristor for pulsed power applications

Jung H. Hur, Peyman Hadizad, Hanmin Zhao, Steven G. Hummel, Paul Daniel Dapkus, Harold R. Fetterman, Martin A. Gundersen

Author Affiliations +

Proceedings Volume 1378, Optically Activated Switching; (1991) https://doi.org/10.1117/12.25066
Event: Advances in Intelligent Robotics Systems, 1990, Boston, MA, United States

Abstract

An optically gated thyristor based on GaAs has been designed fabricated and investigated for pulsed power applications. The device included a 200-pm semi-insulating base layer and was triggered with an 848-nm 1-pJ 100-nsec laser diode. The DC blocking voltage of the thyristor was observed to be V the peak current 300 A and the current rate of rise A/sec. Lock-on effect was also observed and is discussed.

Citation Download Citation

Jung H. Hur, Peyman Hadizad, Hanmin Zhao, Steven G. Hummel, Paul Daniel Dapkus, Harold R. Fetterman, and Martin A. Gundersen "GaAs opto-thyristor for pulsed power applications", Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); https://doi.org/10.1117/12.25066

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