Improvement in dry etching of tungsten features

Michel Heitzmann; Philippe Laporte; Evelyne Tabouret

doi:10.1117/12.48922

1 March 1991 Improvement in dry etching of tungsten features

Michel Heitzmann, Philippe Laporte, Evelyne Tabouret

Author Affiliations +

Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48922
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

The etching of tungsten can be achieved using chlorine or fluorine chemistries. In both cases the selectivity between tungsten and photoresist mask is very low and leads to a slopped etching with a poor C. D. control. So we developped a new process using an intermediate inorganic mask with a chlorine chemistry. The optimisation was carried out using an ECHIP experimental design. In the best conditions a CD control better than O. 1 was achieved with a smoothed tungsten layer 1 thick.

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Michel Heitzmann, Philippe Laporte, and Evelyne Tabouret "Improvement in dry etching of tungsten features", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48922

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